Nonvolatile memory cell

Details Nonvolatile memory cell Nonvolatile memory cell

1999-03-23

2000-02-15

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257317, 257321, H01L 29788

Patent

active

060256265

ABSTRACT:
The invention relates to a self-adjusted nonvolatile memory cell, in which a MOS transistor with source and drain regions is incorporated into the surface region of a semiconductor body. The floating gate and the control gate of the MOS transistor are accommodated, overlapping one another, in a recess trench, while the transistor channel is guided laterally in a surface region of the trench.

REFERENCES:
patent: 5429970 (1995-07-01), Hong

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