Semiconductor device and method of producing the same

Details Semiconductor device and method of producing the same Semiconductor device and method of producing the same

1998-04-02

2000-02-15

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, 257306, 257382, 257384, 438239, 438244, 438253, 438655, 438694, H01L 2972

Patent

active

060256206

ABSTRACT:
In a semiconductor device having a DRAM memo cell and a peripheral circuit, source/drain regions of transistors composing the memory cell are not silicided to restrict a junction leak and to improve a refresh characteristic; surfaces of source/drain regions and gate electrodes of transistors composing the peripheral circuit are silicided to reduce resistance of contacts and resistance of wirings for enabling a high-speed operation; side walls made of insulating material are formed on sides of the gate electrodes of the transistor composing the peripheral circuit to serve as a mask when impurities are injected for forming the source/drain regions; and insulating material laminated in the memory cell serves as a mask against siliciding.

REFERENCES:
patent: 5939746 (1999-08-01), Koyama et al.
C.Y. Ting, et al., "The Use of TISI.sub.2 for Self Aligned Silicide (Salicide) Technology", V-MIC Conf. Proceeding, Jun. 25-26, 1985, pp. 307-318.
Neil H.E. Weste, et al., "Principles of CMOS VLSI Design-A Systems Perspective", (Second Edition), Chapter 8, Subsystem Design, pp. 562-567.

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