Non-volatile memory cell and sensing method

Details Non-volatile memory cell and sensing method Non-volatile memory cell and sensing method

1988-09-12

1989-12-19

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 36518907, G11C 1122, G11C 700

Patent

active

048887331

ABSTRACT:
A ferroelectric memory cell has one capacitor isolated from bit lines by two transistors, one on each side. The cell is read by pulsing the capacitor in one direction, then the other, storing developed charge on other capacitors or the like, and comparing voltages.

REFERENCES:
patent: 4103342 (1978-07-01), Miersch et al.
patent: 4809225 (1989-02-01), Dimmler et al.
Merz et al., "Ferroelectric Storage Devices", Bell Laboratories Record, Sep. 1955, pp. 340, 342.
Pulvira, "Research on the Application of Ferro- and Ferrielectric Phenomena in Computer Devices", Oct. 1963, pp. 40-41.

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