Method of etching conductive lines through an etch resistant pho

Details Method of etching conductive lines through an etch resistant pho Method of etching conductive lines through an etch resistant pho

1996-06-26

2000-02-15

Nuzzolillo, Maria

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438696, 438742, 216 41, 216 49, 216 48, H01L 21321

Patent

active

060252685

ABSTRACT:
A passivation coating is formed on a photoresist mask to increase the resistance of the mask during subsequent etching of an underlying conductive layer to form a pattern of sub-half micron conductive lines. In an embodiment of the invention, the passivation coating is formed by exposing the mask to a plasma containing nitrogen. The passivating coating maintains the substantially vertical mask profile during subsequent etching, such as high density plasma etching, thereby improving the dimensional integrity of the sub-half micron conductive lines.

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"Silicon Processing for the VLSI Era Vol. 1: Process Technology," Wolf et al., Lattice Press, pp. 565-567.

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