Method for forming a mixed phase TiN/TiSi film for semiconductor

Details Method for forming a mixed phase TiN/TiSi film for semiconductor Method for forming a mixed phase TiN/TiSi film for semiconductor

1992-03-03

1993-10-12

Maples, John S.

Fishing, trapping, and vermin destroying

437245, 148DIG147, H01L 21441

Patent

active

052525180

ABSTRACT:
A LPCVD method for depositing a film of TiN on a semiconductor structure includes reacting an organometallic titanium source gas such as TMAT and organic silane as a reactive gas. The deposited film is a mixed phase of TiN and TiSi.sub.2 and is characterized by a low contact resistance, good step coverage and good barrier properties. The reaction is preferably carried out in a cold wall CVD reactor at relatively low temperatures (i.e. 200.degree. C.) and at pressures of from about 0.05 to 30 Torr.

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K. Sugiyama, S. Pac, Y. Takahashi and S. Motojima, "Low Temperature Deposition of Metal Nitrides by Thermal Decomposition of Organometallic Compounds" 122, 1545 (1975).
R. M. Fix, R. G. Gordon and D. M. Hoffman, "Titanium Nitride Thin Films by APCVD Synthesis using Organometallic Precursors"; MRS Smp. Proc. 168, 357 (1990).
D. C. Bradley and I. M. Thomas, Journal of the Chemical Society, 1960, 3857.

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