Etch end point detector using gas flow changes

Details Etch end point detector using gas flow changes Etch end point detector using gas flow changes

1981-06-30

1982-12-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156653, 156657, 156345, 204192E, 204298, 252 791, H01L 21306

Patent

active

043625967

ABSTRACT:
As etching progresses from one layer of material to another in reactive ion etching systems, the partial pressures of the reaction chamber gas components change. In constant pressure reactive ion etching systems, changes in chamber pressure are corrected by changes in the etchant species flow rate into the reaction chamber. By monitoring flow rate, information is obtained which may be used to identify the points where partial pressures change, and latter may, in turn, be used to derive etching points in the material being etched.

REFERENCES:
patent: 4115184 (1978-09-01), Poulsen

Affiliated with

Also associated with

Rating

Etch end point detector using gas flow changes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etch end point detector using gas flow changes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etch end point detector using gas flow changes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1901961