Non-volatile semiconductor memory device capable of electrically

Details Non-volatile semiconductor memory device capable of electrically Non-volatile semiconductor memory device capable of electrically

1991-10-30

1996-05-14

Clawson, Jr., Joseph E.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365208, 365210, G11C 1122

Patent

active

055174450

ABSTRACT:
A non-volatile semiconductor memory device, includes a memory cell having a capacitor formed by stacking a semiconductor layer and a ferroelectric layer between a pair of electrodes, the semiconductor layer and the ferroelectric layer forming a semiconductor-ferroelectric junction, a writing circuit in which a voltage higher than a coercive electric field of the ferroelectric material is applied to the capacitor of the memory cell to align a polarization direction of the ferroelectric layer in a predetermined direction so as to set a capacitance of the capacitor at a predetermined value, thereby writing data corresponding to the predetermined value of the capacitance, and a reading circuit in which a voltage less than the coercive electric field of the ferroelectric layer is applied to the capacitor of the memory cell in which the data is written, thereby reading the data.

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Ferroelectrics, "Thin Ferroelectric Films of BaTiO.sub.3 on Doped Silicon"; J. K. Park et al, vol. 10, pp. 217-220 (1976).
Proceedings of 6th ISAF (Int'l Symposium on Applications of Ferroelectrics); "Non-Volatile Memory Behavior of Metal-Ferro-Electric (BaTiO.sub.3)--Semiconductor (Si)-MFS Devices"; A. Mansingh et al, pp. 576-579 (1986).
Applied Physics A, "A Study of Electronic States Near the Interface in Ferroelectric--Semiconductor Heterojunction Prepared by rf Sputtering of PbTiO.sub.3 "; Y. Matsui et al, vol. 28, pp. 161-166 (1982).

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