Multi-zone plasma processing method and apparatus

Details Multi-zone plasma processing method and apparatus Multi-zone plasma processing method and apparatus

1992-06-24

1993-10-12

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 1, 156345, 20429833, 20429834, 20429837, 118 501, 118723E, H01L 21306, B44C 122

Patent

active

052521788

ABSTRACT:
A multi-zone multi-electrode plasma processing method for uniform plasma processing and effective in-situ fabrication reactor process chamber (10) cleaning during a plasma deposition or etch process first comprises the steps of flowing plasma deposition or etch gases into the process chamber (10) in a chopped or continuous mode (line 214) followed by flowing plasma gases into the process chamber (10) in a chopped mode (220) or a continuous mode. By intermittently activating (224) at least one plasma electrode (24 or 52) upon initiating flow of the plasma processing gas, the method generates a process plasma medium to perform the plasma-enhanced deposition or etch process. Additionally, intermittently activating the same or a different configuration of plasma electrodes (66), during the time that the process gas flows are stepped, an in-situ cleaning plasma is produced for performing a plasma-assisted chamber cleaning process. The multi-zone plasma processing method of this invention permits flexible activation of multiple plasma electrodes in a time-division-multiplexed or continuous format using one or several radio-frequency power sources in order to control plasma density and uniformity as well as ion energies near semiconductor wafer (22), process chamber walls (38), and gas showerhead (52).

REFERENCES:
patent: 4786352 (1988-11-01), Benzing
patent: 5006192 (1991-04-01), Deguchi
patent: 5084125 (1992-01-01), Aoi

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