Semiconductor device having multilayered wiring structure with a

Details Semiconductor device having multilayered wiring structure with a Semiconductor device having multilayered wiring structure with a

1991-03-27

1992-04-07

James, Andrew J.

Fishing, trapping, and vermin destroying

437203, H01C 1706, H01C 700, H01L 2188, H01L 2928

Patent

active

051032880

ABSTRACT:
The semiconductor device of the present invention includes a semiconductor substrate on which are formed semiconductor elements, and a plurality of wiring layers formed on the semiconductor substrate via porous insulating films. The surface of the plurality of the wiring layers is preferably covered with a compact insulating film. The size of the pores in the porous insulating film is preferably 5 nm to 50 nm in diameter, and the volume of the pores in the porous insulating film is preferably 50% to 80% of the total volume of the porous insulating film. The porous insulating film is formed by subjecting a mixed insulating film of a basic oxide and an acidic oxide to a heat treatment to precipitate only either one of the basic oxide and the acidic oxide, and then dissolving out selectively the basic or acidic oxide precipitated.

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"Proceedings of Third International IEEE VLSI Multilevel Interconnection Conference", 1986, pp. 100-106.
"Proceedings of First International IEEE VLSI Multilevel Interconnection Conference", 1984, pp. 37-44.
IEEE Journal of Solid-State Circuits, vol. SC-13, No. 4, 1978, pp. 462-467.

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