Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-12-20
1996-05-14
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257317, 257365, 257401, 257206, H01L 29788, H01L 2994, H01L 31062, H01L 27105
Patent
active
055170447
ABSTRACT:
A non-volatile semiconductor memory device is constituted by a plurality of thin film memory transistors, each having a control gate electrode formed on an insulating film on a semiconductor substrate, a first gate insulating film covering said control gate electrode, a floating gate electrode formed on said first gate insulating film, a second gate insulating film provided on said floating gate electrode, a channel region of a first conductivity type semiconductor film provided on said second gate insulating film, and source/drain regions of a second conductivity type semiconductor film formed with said channel region being interposed therebetween. A memory device such as an EPROM or FEPROM is formed by using the above thin film memory transistors. The invention provides a semiconductor memory device which operates at a high speed and in which it is possible to achieve a high integration.
REFERENCES:
patent: 4667217 (1987-05-01), Janning
patent: 4980732 (1990-12-01), Okazawa
patent: 5338956 (1994-08-01), Nakamura
Crane Sara W.
NEC Corporation
Tang Alice W.
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