MOS semiconductor device

Details MOS semiconductor device MOS semiconductor device

1992-01-08

1992-12-29

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257402, H01L 2910, H01L 2978, H01L 3986

Patent

active

051755998

ABSTRACT:
An MOS semiconductor device has n.sup.30 -type source and drain regions in the main surface of a p.sup.30 -type monocrystalline silicon substrate. A p.sup.30 -type channel region is formed between the source and drain regions. A gate oxide film is provided on the main surface of the channel region, and a gate electrode is formed on the gate oxide film. In the portion of the monocrystalline silicon substrate between the source and drain regions, an inversion layer control region having an impurity concentration lower than that of the substrate is buried adjacent to the drain region. When a voltage is applied between the source and drain regions, the inversion layer control region maintains up to a high voltage an n-type inversion layer formed in the channel region.

REFERENCES:
Shoji Shukuri et al., "Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon" Extended Abstract of the 16th (1984 International) Conference on Solid State Devices and Materials Kobe, pp. 91-94, Aug. 30, 1984.

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