Nonvolatile semiconductor memory device and manufacturing method

Details Nonvolatile semiconductor memory device and manufacturing method Nonvolatile semiconductor memory device and manufacturing method

1994-07-26

1995-10-24

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257322, 36518501, H01L 29788

Patent

active

054612497

ABSTRACT:
A drain diffusion layer acting as a drain of both of a memory transistor and a selection transistor, and a source diffusion layer acting as a source of both of the memory transistor and the selection transistor are formed in a semiconductor substrate. A floating gate having a convex upper surface is formed on a tunnel insulating film in the vicinity of the drain diffusion layer. A common gate acting both as a control gate of the memory transistor and as a gate of the selection transistor is formed such that its one end is located over the floating gate and the other end is located in the vicinity of the source diffusion layer.

REFERENCES:
patent: 4087795 (1978-05-01), Rossler
patent: 4882707 (1989-11-01), Mizutani
patent: 5051793 (1991-09-01), Wang
patent: 5138573 (1992-08-01), Jeuch

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device and manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device and manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device and manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1888496