Semiconductor apparatus with tungstein nitride

Details Semiconductor apparatus with tungstein nitride Semiconductor apparatus with tungstein nitride

1996-11-19

1998-07-14

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257412, 257751, 257763, 257924, H01L 2302

Patent

active

057809089

ABSTRACT:
Through exposure of the top surface of a tungsten film to plasma of a gas including nitrogen at a temperature of 550.degree. C. or less, a tungsten nitride layer having a structure in which nitrogen atoms and tungsten atoms are bonded is formed in an area in the vicinity of the surface of the tungsten film. Then, an aluminum alloy film is deposited on the tungsten film, thereby forming a metallic interconnection. Since the nitrogen atoms and the tungsten atoms are bonded in the tungsten nitride layer formed by such plasma nitridation, the tungsten nitric layer not only has a good barrier function to prevent the diffusion of other metal atoms but also can be formed in a small thickness. Accordingly, formation of an alloy layer with a high resistance otherwise caused due to counter diffusion during an annealing process and a junction leakage can be avoided.

REFERENCES:
patent: 4829363 (1989-05-01), Thomas et al.
patent: 5350711 (1994-09-01), Hall
patent: 5414301 (1995-05-01), Thomas
patent: 5440174 (1995-08-01), Nishitsuji
patent: 5561326 (1996-10-01), Ito et al.
patent: 5589712 (1996-12-01), Kawashima et al.
patent: 5592024 (1997-01-01), Aoyamo et al.
patent: 5623157 (1997-04-01), Miyazaki et al.

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