Semiconductor device having LDD structure with pocket on drain s

Details Semiconductor device having LDD structure with pocket on drain s Semiconductor device having LDD structure with pocket on drain s

1996-12-06

1998-07-14

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257335, 257336, 257408, H01L 31113

Patent

active

057809020

ABSTRACT:
A semiconductor device with an LDD structure type MOS transistor is fabricated by forming a gate electrode on a semiconductor layer of a first conductivity type and a source/drain region in the semiconductor layer, the source/drain region having a high impurity concentration region and a low impurity concentration region of a second conductivity type. A pocket of the first conductivity type is formed in contact with the low impurity concentration region only on a drain region side and immediately under the low concentration region of the second conductivity type. The pocket formed only on the drain side can suppress the short channel effect and also the hot carrier generation without lowering the current capacity on the source side where no pocket is present.

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Ogura et al; "A Half Micron MOSFET Using Double Implanted LDD"; 1982; pp. 718-721; IEEE.

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