Semiconductor device with a vertical field effect transistor and

Details Semiconductor device with a vertical field effect transistor and Semiconductor device with a vertical field effect transistor and

1997-05-15

1998-07-14

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257333, 257334, H01L 2976, H01L 2974, H01L 31062

Patent

active

057808988

ABSTRACT:
On a semiconductor substrate made of p-type silicon, there are formed, in a successively layered fashion, a first p-type silicon semiconductor layer, laterally paired first n-type silicon semiconductor layers, laterally paired second p-type silicon semiconductor layers, and laterally paired n-type silicon semiconductor layers, by an epitaxial growth method. On the second n-type silicon semiconductor layer on the right side, there are successively formed a third p-type silicon semiconductor layer, a third n-type silicon semiconductor layer and a fourth p-type silicon semiconductor layer. The left first n-type silicon semiconductor layer, left second p-type silicon semiconductor layer and left second n-type silicon semiconductor layer form a first insular multilayered portion forming an n-channel MOSFET. The third p-type silicon semiconductor layer, third n-type silicon semiconductor layer and fourth p-type silicon semiconductor layer form a second insular portion forming a p-channel MOSFET. A first gate electrode is formed on a side surface of the left second p-type silicon semiconductor layer with a gate insulating film therebetween, and a second gate electrode is formed on a side surface of the right third n-type silicon semiconductor layer with a gate insulating film therebetween.

REFERENCES:
patent: 5670810 (1997-09-01), Tamaki et al.

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