Nonvolatile semiconductor memory device having stacked-gate type

Details Nonvolatile semiconductor memory device having stacked-gate type Nonvolatile semiconductor memory device having stacked-gate type

1997-02-21

1998-07-14

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, H07L 29788

Patent

active

057808945

ABSTRACT:
A nonvolatile semiconductor memory device includes a semiconductor substrate having at least one active region defined between two adjacent element-isolation regions and extending in a first direction, a first insulation film formed on a surface of the semiconductor substrate at the active region, and at least one memory cell transistor having a stacked gate structure including a floating gate and a control gate formed on the first insulation film and extending in a second direction intersecting the first direction. The floating gate has a center portion disposed on the active region, a first portion disposed adjacent to the center portion and extending in the second direction over one of the two adjacent element-isolation regions and a second portion disposed adjacent to the center portion and extending in the second direction over the other of the two adjacent element-isolation regions. The center portion and the first portion have a substantially uniform width as measured in the first direction while the second portion includes a portion having a width larger than that of the first portion.

REFERENCES:
patent: 4395724 (1983-07-01), Iwahashi et al.
patent: 4477883 (1984-10-01), Wada
patent: 5204542 (1993-04-01), Namaki et al.
patent: 5412238 (1995-05-01), Chang

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