Non-volatile semiconductor memory device including memory transi

Details Non-volatile semiconductor memory device including memory transi Non-volatile semiconductor memory device including memory transi

1996-12-19

1998-07-14

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257315, 257316, 257317, 257322, 257262, 257264, H01L 2976, H01L 29788

Patent

active

057808937

ABSTRACT:
A non-volatile semiconductor memory device including a memory cell having a memory transistor and a selection transistor, comprising: a composite gate structure of the memory transistor formed on a surface of a semiconductor substrate at its first region with a first insulating film interposed therebetween and including a laminate of a floating gate electrode, a second insulating film and a control gate electrode; a gate electrode of the selection transistor formed on the surface of the semiconductor substrate at its second region close to the first region with a third insulating film interposed therebetween; and an impurity diffusion layer formed in the semiconductor substrate at its region between the first and second regions and functioning as a drain of the memory transistor, common to a source of the selection transistor, the impurity diffusion layer having at least an extension region extending to a part of the semiconductor substrate disposed under the composite gate structure, the extension region having first, second and third layers wherein the first and second layers include first and second impurities at first and second different concentrations, respectively, and the third layer includes a third impurity at a third concentration higher than any one of the first and second concentrations and a method of manufacturing the non-volatile semiconductor memory device as above-mentioned.

REFERENCES:
patent: 5345104 (1994-09-01), Prall et al.
patent: 5502321 (1996-03-01), Matsushita
patent: 5585293 (1996-12-01), Sharma et al.
Wolf, "Silicon Processing for the VLSI Era, vol. 2: Process Integration", Lattice Press, pp. 628-629, 1990.
Yoshikawa et al., A Reliable Profiled Light;y-Doped Drain (PLD) Cell for High Density Submicron EPROMS and Flash EPROMS, Abstracts of the 20th Conference on Solid State Devices and Materials, Tokyo, 1988, pp. 165-168 no month.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory device including memory transi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device including memory transi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device including memory transi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1884713