Crystal growth of group II-VI compound semiconductor

Details Crystal growth of group II-VI compound semiconductor Crystal growth of group II-VI compound semiconductor

1991-05-08

1992-12-29

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148DIG64, 156603, 156622, 156624, 156DIG72, 156DIG73, 156DIG77, 437102, C30B 700

Patent

active

051748541

ABSTRACT:
A ZnSe source crystal is treated in a Se vapor pressure peaks are obtained when the Se pressure is 6 to 9 atoms dissolved in a Zn solvent to the saturation concentration at a high temperature portion in the solution. A ZnSe single crystal is grown on an underlie substrate placed at a low temperature portion in the solution. When the temperature of the vapor pressure treatment is 1050.degree. C., excellent photoluminescence peaks are obtained when the Se pressure is 6 to 9 atoms.

REFERENCES:
patent: 4465527 (1984-08-01), Nishizawa
patent: 4526632 (1985-07-01), Nishizawa et al.
patent: 4572763 (1986-02-01), Nishizawa
patent: 4685979 (1987-08-01), Nishizawa
patent: 4909998 (1990-03-01), Nishizawa

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