Method for chemical-mechanical polish (CMP) planarizing of coope

Details Method for chemical-mechanical polish (CMP) planarizing of coope Method for chemical-mechanical polish (CMP) planarizing of coope

1996-04-08

1998-07-14

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

138687, H01L 2144

Patent

active

057803587

ABSTRACT:
A Chemical-Mechanical Polish (CMP) planarizing method and a Chemical-Mechanical Polish (CMP) slurry composition for Chemical-Mechanical Polish (CMP) planarizing of copper metal and copper metal alloy layers within integrated circuits. There is first provided a semiconductor substrate having formed upon its surface a patterned substrate layer. Formed within and upon the patterned substrate layer is a blanket copper metal layer or a blanket copper metal alloy layer. The blanket copper metal layer or blanket copper metal alloy layer is then planarized through a Chemical-Mechanical Polish (CMP) planarizing method employing a Chemical-Mechanical Polish (CMP) slurry composition. The Chemical-Mechanical Polish (CMP) slurry composition comprises a non-aqueous coordinating solvent and a halogen radical producing specie.

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Hui-Qing et al. "Copper Metal Oxidation by a Dimethylsulfoxide Carbon Tetrachloride Mixture" Proceedings, Science Research Congress 1992, Singapore, pp. 81-86.

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