Method of forming an isolation oxide for silicon-on-insulator te

Details Method of forming an isolation oxide for silicon-on-insulator te Method of forming an isolation oxide for silicon-on-insulator te

1995-10-23

1998-07-14

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

H01L 2176

Patent

active

057803528

ABSTRACT:
A method of forming an isolation oxide (30) on a silicon-on-insulator (SOI) substrate (21) includes disposing a mask layer (26, 27) over a region of a silicon layer (24) of the SOI substrate (21). The isolation oxide (30) is grown in a different region (28) of the silicon layer (24). The isolation oxide (30) is grown to a depth (32) within the silicon layer (24) of less than or equal to a thickness (29) of the silicon layer (24). After removing the mask layer (26, 27), the isolation oxide (30) is further grown in the different region (28) of the silicon layer (24) such that the isolation oxide (30) is coupled to a buried electrically insulating layer (23) within the SOI substrate (21). The buried electrically insulating layer (23) and the isolation oxide (30) electrically isolate an active region (43) of a semiconductor device (20).

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