Methods of making isolations including doped edge layer, for sem

Details Methods of making isolations including doped edge layer, for sem Methods of making isolations including doped edge layer, for sem

1996-12-11

1998-07-14

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438149, 438219, 438404, 438430, 438435, 257347, 257507, H01L 2100

Patent

active

057803250

ABSTRACT:
Isolation regions for a semiconductor layer of a semiconductor-on-insulator substrate are fabricated by forming a patterned implantation mask on the semiconductor layer. The patterned implantation mask includes mask sidewalls. An implantation masking film is formed on the sidewalls of the patterned implantation mask. Ions are implanted into the semiconductor layer, using the patterned implantation layer and the implantation masking film as a mask, to thereby form a doped region in the semiconductor layer. Sidewall spacers are formed on the implantation masking film, opposite the patterned implantation mask. The doped region between the sidewall spacers is etched to thereby define a trench in the semiconductor layer between the sidewall spacers and a doped edge layer in the semiconductor layer which extends from the trench to the implantation masking film. Insulating material is then formed in the trench.

REFERENCES:
patent: 5264395 (1993-11-01), Bindal et al.
patent: 5414288 (1995-05-01), Fitch et al.
patent: 5610083 (1997-03-01), Chan et al.

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