Multilayer resists with improved sensitivity and reduced proximi

Details Multilayer resists with improved sensitivity and reduced proximi Multilayer resists with improved sensitivity and reduced proximi

1986-05-29

1988-05-17

Bueker, Richard R.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430271, 430276, 430502, 430523, 430942, 156643, G03C 500, G03C 1495, G03C 146, G03C 194

Patent

active

047450444

ABSTRACT:
The present invention discloses multi-layered resist structures and methods of producing them which can be used in electronic device lithography to produce micrometer and submicrometer geometries.
The resist structure comprises two or more layers at least one of which is a metallic material and at least one of which is a radiation-sensitive material. The metallic layer exhibits both a high atomic number and a high density. The metallic material is positioned relative to the radiation-sensitive polymeric material so that it can be used to control reflection and backscatter of radiation used to create a latent image within the radiation-sensitive polymeric material. The thickness of the metallic layer is determined by the amount of reflection desired and the amount of backscatter permitted into the layer of radiation-sensitive polymeric material.

REFERENCES:
patent: 4165395 (1979-08-01), Chang
patent: 4362598 (1982-12-01), Griffing
patent: 4493855 (1985-01-01), Sachdev et al.
patent: 4494004 (1985-01-01), Mauer, IV et al.
patent: 4612275 (1986-09-01), Gregor

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