Method for preparing a fluoro-containing polyimide film

Details Method for preparing a fluoro-containing polyimide film Method for preparing a fluoro-containing polyimide film

1997-06-12

1998-07-14

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272481, 427294, 427295, 4273881, 427346, 437231, 437245, H05H 124

Patent

active

057801215

ABSTRACT:
A method for blending fluorine into a polyimide free of fluorine comprises the steps of generating fluorine radicals in a fluorine based gas, removing charge particles from the gas to leave the fluorine radicals in the gas, and exposing a polyimide free of fluorine to an irradiation of the fluorine radicals so that the irradiated fluorine radicals penetrate into the polyimide, thereby avoiding reaction of the charge particles with a surface of the polyimide.

REFERENCES:
Y. Misawa et al., "A New Multilevel Interconnection System for Submicrometer VLSI's Using Multilayered Dielectrics of Plasma Silicon Oxide and Low-Thermal-Expansion Polyimide", IEEE Transactions on Electron Devices, Mar. 1987, vol. ED-34, No. 3, pp. 621-627.
S-Y. Wu, "Dielectric and Chemical Modifications in Polyimide Films Etched in O.sub.2 /CF.sub.4 Plasmas", J. Vac. Sci. Technol., Jul./Aug. 1993, vol. 11, No. 4, pp. 1337-1345.
E. Onyiriuka, "Effects of O.sub.2, Air, and CF.sub.4 Plasmas on Poly(etherketon) Surfaces", J. Vac. Sci. Technol., Nov./Dec. 1993, Vo. 11, No. 6, pp. 2941-2944.
"Fluoro-Containing Polymide Blends: Prediction and Experiments", Journal of Polymer Science: Part A: Polymer Chemistry, 1991, vol. 29, pp. 1207-1212. (no month avail.).

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