Method of making capacitor of highly integrated semiconductor de

Details Method of making capacitor of highly integrated semiconductor de Method of making capacitor of highly integrated semiconductor de

1996-02-21

1998-02-24

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437977, 437978, H01L 218242

Patent

active

057211531

ABSTRACT:
A capacitor of a highly integrated semiconductor device and a manufacturing method thereof is provided. In the highly integrated semiconductor device, an HSG polysilicon layer pattern is formed having a multitude of hemispherical grains (HSG) on the top and side surfaces of the storage electrode. Thus, the etching of and damage to the HSG polysilicon layer pattern can be prevented, and capacitance can be increased by maximizing the surface area of the storage electrode.

REFERENCES:
patent: 5102832 (1992-04-01), Tuttle
patent: 5302540 (1994-04-01), Ko et al.
patent: 5387531 (1995-02-01), Rha et al.
patent: 5597760 (1997-01-01), Hirota

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