Method of forming buried contact architecture within a trench

Details Method of forming buried contact architecture within a trench Method of forming buried contact architecture within a trench

1996-04-29

1998-02-24

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 35, 437191, 437203, H01L 21266

Patent

active

057211469

ABSTRACT:
An method for the fabrication of an improved polysilicon buried contact is described. The contact is formed within a trench etched into the silicon substrate. The effective area of the contact is thereby increased over the conventional planar buried contact by an amount equal to the area of the trench walls. For sub-micron sized buried contacts and trenches 1000 to 3000 Angstroms deep this area can be twice that of the conventional planar buried contact. Contacts formed in this fashion are particularly beneficial in the manufacture of static-random-access memory devices(SRAMs) through their application with local-interconnects. They afford a lower contact resistance, manifested by the greater effective contact area, as well as a much reduced risk of open or high resistive contacts due to photomask mis-alignment. The presence of the trench also results in a higher junction capacitance which affords a reduction in soft-error-rates, a notable concern for memory devices.

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patent: 5550085 (1996-08-01), Liu
S. Wolf, "Silicon Processing For The VLSI Era-Volz", 1990 Lattice Press, Sunset Beach, CA, pp. 160-162, 577-580.

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