Semiconductor integrated circuit device operating at high speed

Details Semiconductor integrated circuit device operating at high speed Semiconductor integrated circuit device operating at high speed

1997-09-26

1999-05-04

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257339, 257356, 257371, 257393, 257487, H01L 2972

Patent

active

059006650

ABSTRACT:
A substrate region of an n-channel MOS transistor is supplied with a bias voltage (VNBL) lower than a ground voltage (Vss) in a standby cycle, and with a bias voltage (VNBH) higher than the ground voltage in an active cycle. The difference between an internal power supply voltage (intVcc) and the bias voltage (VNBL) is at the level of a driving voltage (VPP) transmitted to a selected word line, while the arithmetic mean of the bias voltages (VNBL, VNBH) is substantially at the level of the ground voltage. A back gate voltage can be generated by a MOS transistor having gate insulating film breakdown voltage of the same degree as that of a memory cell transistor. Reliability of the gate insulating film of the MOS transistor of a back gate voltage generation circuit is improved, and the back gate voltage is readily generated on-chip.

REFERENCES:
patent: 5461338 (1995-10-01), Hirayama et al.
Advanced Electronics Series I-9, "VLSI Memory" by K.Itoh, Baifukan Shuppan, published on Nov. 5, 1994, pp.351-353.
"Reducing a Standby Power to a Conventional Device . . . ", T. Kuroda et al., Niddei Microdevices, Mar. 1995, pp.58-60.

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