Method of making low-k fluorinated amorphous carbon dielectric

Details Method of making low-k fluorinated amorphous carbon dielectric Method of making low-k fluorinated amorphous carbon dielectric

1998-02-13

1999-05-04

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427573, 427 99, B05D 306, C23C 1630

Patent

active

059002905

ABSTRACT:
The invention provides a process for depositing fluorinated amorphous carbon (a-F:C) films on IC wafers to provide a low-k interconnect dielectric material. The process, carried out in a PECVD chamber, introduces silane gas (SiH.sub.4) into the mixture of C.sub.4 F.sub.8 and CH.sub.4 gases used to deposit a-F:C films. The silane helps to decrease the fluorine etchants in the deposited film, helping to improve the crosslinks in the deposited product. Film produced in accordance with the present invention has both low-k, generally below 2.4, and high thermal stability, generally above 440.degree. C., allowing for higher thermal anneal temperatures.

REFERENCES:
Paper titled, "Diamondlike Carbon Materials as Low-k Dielectrics for Multilevel Interconnects in ULSI" by A. Grill, A. Patel, K.L. Saenger, C. Jahnes, S.A. Cohen, A.G. Schrott, D.C. Edelstein and J.R. Paraszczak, pulished in Mat. Res. Soc. Symp. Proc. vol. 443, 1997 Materials Research Society, pp. 155-164.
Paper titled, "Two Approaches to the Development of Los K Systems; Parylene AF-4, and Fluorinated Amorphous Carbon" by A. Harrus, J. Kelly, D. Kumar, T. Mountsier and M.A. Plano presented at 52.sup.nd Semiconductor Symposium of the Japaneses ECS, pp. 76-81.
Paper titled, Fluorocarbon Films from Plasma Polymerization of Hexafluoropropylene and Hydrogen, by T.W. Mountsier and D. Kumar, published in Mat. Res. Soc. Symp. Proc. vol. 443, 1997 Materials Research Society, pp. 41-46.
Paper titled, "Ultra Low k Dielectric PECVD .alpha.-FC Films for Damascene Application" by S. Robles, P. Xu, W-F. Yau, J. Huang and K. Fairbairn presented at Advanced Metallization and Interconnect Systems for ULSI Systems Conf., Sep. 1997. No Page Number |.
Paper titled, "Fluorinated Amorphous Carbon Thin Films Grown from C.sub.4 F.sub.8 for Multilevel Interconnections of Integrated Circuits" by K. Endo, T. Tatsumi, Y. Matsubara and T. Horiuchi published in Mat. Res. Soc. Symp. Proc. vol. 443, 1997 Materials Research Society, pp. 165-170.
Article titled, Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications by W. W. Lee and P.S. Ho, published in MRS Bulletin/Oct. 1997, pp. 19-23.

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