Plasma process chamber

Details Plasma process chamber Plasma process chamber

1997-05-01

1999-05-04

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723E, 118728, 156345, 427569, 438710, 438758, C23C 1600

Patent

active

059000643

ABSTRACT:
A process chamber (14) for processing a substrate (12) in a plasma, comprises a support for supporting the substrate having a surface with a perimeter (32). A gas distributor is provided for distributing process gas into the chamber (14). A plasma generator (40) is used to generate a plasma comprising plasma species from the process gas. A plurality of electrical ground pathways (80) around the perimeter (32) of the substrate (12) are spaced apart, electrically isolated from one another, and provide electrical paths to ground for the charge carried by the plasma species. Preferably, the ground pathways (80) extend through a dielectric surface (70) abutting and extending substantially continuously around the perimeter (32) of the substrate (12).

REFERENCES:
patent: 4645218 (1987-02-01), Ooshio et al.
patent: 4869801 (1989-09-01), Helms et al.
patent: 5213658 (1993-05-01), Ishida
patent: 5228501 (1993-07-01), Tepman et al.
patent: 5246532 (1993-09-01), Ishida
patent: 5298465 (1994-03-01), Levy
patent: 5330607 (1994-07-01), Norwicki
patent: 5352294 (1994-10-01), White et al.
patent: 5423918 (1995-06-01), Gupta et al.
patent: 5552124 (1996-09-01), Su
patent: 5556500 (1996-09-01), Hasegawa et al.
patent: 5578164 (1996-11-01), Kurono et al.
patent: 5643394 (1997-07-01), Maydan et al.
patent: 5685914 (1997-11-01), Hill et al.
patent: 5746875 (1998-05-01), Maydan et al.
patent: 5783492 (1998-07-01), Higuchi et al.

Affiliated with

Also associated with

Rating

Plasma process chamber does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma process chamber, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma process chamber will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1867703