Method of obtaining polycrystalline silicon and workpiece useful

Stock material or miscellaneous articles – Self-sustaining carbon mass or layer with impregnant or...

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428447, 428938, 264 81, B32B 900

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active

042712351

ABSTRACT:
Polycrystalline silicon is obtained by providing a silicon wafer having disposed over at least one face thereof a base coating of oxide, nitride or oxynitride composition, forming a substantially pinhole-free and scratch-free layer of carbon on said base coating over at least the face, forming on the face of the carbon layer a layer of polycrystalline silicon, and removing the silicon layer from the protective coating. Any of the carbon layer adhering to the silicon layer is easily removable to provide the silicon layer separate from the substrate. The wafer/coating unit is reusable in the procedure. The wafer/coating/carbon layer unit comprises a workpiece useful in the practice of the invention.

REFERENCES:
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patent: 3565674 (1971-02-01), Boland et al.
patent: 3867497 (1975-02-01), Teich et al.
patent: 3900540 (1975-08-01), Robba et al.
patent: 3961003 (1976-06-01), Parsels
patent: 4125425 (1978-11-01), Brissot
patent: 4131659 (1978-12-01), Authier et al.
patent: 4137355 (1979-01-01), Heaps et al.

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