Method of forming oxide isolation in a semiconductor device

Details Method of forming oxide isolation in a semiconductor device Method of forming oxide isolation in a semiconductor device

1997-07-14

1999-05-04

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

H01L 2176

Patent

active

058997261

ABSTRACT:
After providing a patterned nitride layer over a patterned layer of oxide in turn disposed on a silicon substrate, a covering layer of oxide or polysilicon is deposited over the resulting structure to contact the substrate to hold the patterned nitride layer portions in position as field oxide is grown. In addition, field oxide growth rate slows at the edges of the nitride layer portions, allowing additional time for field oxide to flow as it is grown, relieving lifting force on the nitride layer portions, and providing an increase in silicon active area between field oxide regions.

REFERENCES:
patent: 4666556 (1987-05-01), Fulton et al.
patent: 5286672 (1994-02-01), Hodges et al.
Martin, R., "Spacer for Improved Local Oxidation Profile", IBM Tech. Disc. Bull. No. 5, vol. 12, Sep., Oct. 1987, pp. 351-353.

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