Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-04-03
1999-05-04
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438158, 438166, 438161, 438303, 438782, H01L 21336, H01L 2128, H01L 21283, H01L 2184
Patent
active
058997091
ABSTRACT:
An improved method for manufacturing an insulated gate field effect transistor is described. The method comprises the steps of forming a semiconductor film on an insulating substrate, forming a gate insulating film on said semiconductor film, forming a gate electrode on said gate insulating film with said gate insulating film inbetween, anoding said gate electrode in order to coat an external surface of said gate electrode with an oxide film thereof and applying a negative or positive voltage to said gate electrode with respect to said semiconductor film. Lattice defects and interfacial states caused by the application of a positive voltage during the anoding are effectively eliminated by the negative voltage application.
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Adachi Hiroki
Takemura Yasuhiko
Uochi Hideki
Yamazaki Shunpei
Zhang Hongyong
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Wilczewski Mary
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