Semiconductor device having a bump electrode connected to an inn

Details Semiconductor device having a bump electrode connected to an inn Semiconductor device having a bump electrode connected to an inn

1995-11-09

1998-06-30

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

257751, 257773, 257779, 257784, H01L 2941

Patent

active

057738882

ABSTRACT:
A semiconductor device having bump electrodes, each having a structure wherein an alloy layer such as Au--Sn formed by the reaction between the Sn-plated layer on the surface of the inner lead and the bump electrode never reach the bottom surface of the passivation opening portion, is provided. The center of the passivation opening portion is displaced apart from the center of an electrode pad to a direction toward the center of the semiconductor substrate. The center of the passivation opening portion is displaced away from the outer lead and close to the tip end of the inner lead in contrast to the center of the bump electrode. By positioning the passivation opening portion such that the center thereof is located nearer to the center of semiconductor substrate than a center of the bump electrode, without changing the height of the bump electrode or the size of the passivation opening portion, the Au--Sn alloy etc. caused by the reaction between the Sn-plated layer of the inner lead and the metal layer of the bump electrode can be prevented from reaching the passivation opening portion.

REFERENCES:
patent: 5473197 (1995-12-01), Idaka et al.
patent: 5478973 (1995-12-01), Yoon et al.

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