Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1996-04-24
1998-06-30
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257329, 257330, 257342, H01L 310312
Patent
active
057738491
ABSTRACT:
A field controlled semiconductor device of SiC has a drain, a highly doped substrate layer on top of the drain and a low doped n-type drift layer on top of the substrate layer. A p-type base layer is located on the drift layer and a vertical trench extends through the base layer. In the trench an n-type channel region extends vertically along a wall of the trench and connects a source region layer to the drift layer. A gate electrode is arranged in the trench to be on the opposite side of the channel region with respect to the base layer.
REFERENCES:
patent: 3823352 (1974-07-01), Pruniaux et al.
patent: 5014102 (1991-05-01), Adler
patent: 5032888 (1991-07-01), Seki
patent: 5312782 (1994-05-01), Miyazawa
patent: 5323040 (1994-06-01), Baliga
patent: 5396085 (1995-03-01), Baliga
patent: 5451797 (1995-09-01), Davis et al.
patent: 5489787 (1996-02-01), Amaratunga et al.
patent: 5614749 (1997-03-01), Ueno
Andersson Mats
Bakowski Mietek
Gustafsson Ulf
Harris Christopher
ABB Research Ltd.
Crane Sara W.
Wille Douglas A.
LandOfFree
Field of the invention does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field of the invention, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field of the invention will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1862647