Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1994-09-06

1996-07-09

Bradley, P. Austin

Metal fusion bonding

Process

Plural joints

228245, 228254, B23K 3102

Patent

active

055336647

ABSTRACT:
In bonding the connecting electrodes of adjacent semiconductor chips to each other, a solder layer shaped like a bump is formed on that portion of the connecting electrode which is positioned on the upper surface of the semiconductor chip. The semiconductor chips are positioned close to each other such that the connecting electrodes of these chips are aligned with each other. Then, the solder layer is melted to cause the molten solder to flow along the entire region of the connecting electrode and, thus, to achieve mutual bonding of the connecting electrodes in the entire regions including the upper surface region and the side surface region. The method permits stably bonding semiconductor chips to each other with a high bonding strength, leading to an improved reliability of electric connection in the bonded portion.

REFERENCES:
patent: 3187242 (1965-06-01), Schick
patent: 3750252 (1973-08-01), Landman
patent: 4402450 (1983-09-01), Abraham et al.

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