Method for producing silicon film to bury contact hole

Details Method for producing silicon film to bury contact hole Method for producing silicon film to bury contact hole

1996-01-25

1998-06-30

Niebling, John

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

438482, 438488, 438607, 438639, 438675, H01L 2128

Patent

active

057733570

ABSTRACT:
A method of forming a silicon-based thin film for burying contact holes having a high aspect ratio is disclosed. The method comprises the steps of forming contact holes in an insulating film provided on a semiconductor substrate, and growing a silicon-based (silicon or silicon alloys) film containing impurities by Chemical Vapor Deposition to bury the contact holes. The growth is performed by simultaneously feeding a material gas for forming the silicon-based film and an etching gas for etching the silicon-based film, where the material gas is fed under surface reaction limiting conditions to equalize gas concentrations inside and outside said contact holes, and the etching gas is fed under supply rate limiting conditions to make the gas concentration outside the contact hole higher than that at the bottom of the contact hole.

REFERENCES:
patent: 4716048 (1987-12-01), Ishihara et al.
patent: 5183781 (1993-02-01), Nakano

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