Polysilicon grown by pulsed rapid thermal annealing

Details Polysilicon grown by pulsed rapid thermal annealing Polysilicon grown by pulsed rapid thermal annealing

1996-07-24

1998-06-30

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438166, 438487, 148DIG4, 148DIG16, H01L 21268

Patent

active

057733295

ABSTRACT:
A method of low temperature and rapid silicon crystallization or rapid transformation of amorphous silicon to high quality polysilicon over a large area is disclosed using a pulsed rapid thermal annealing (PRTA) method and a metal seed layer. The PRTA method forms polysilicon thin film transistors (TFTs) with a high throughput, on low temperature and large area glass substrates. The PRTA method includes the steps of forming over a glass layer a tri-layer structure having a layer of amorphous silicon sandwiched between bottom and top dielectric layers; selectively etching the top dielectric layer to expose portions of the amorphous silicon layer; forming a metal seed layer over the exposed portions of the amorphous silicon layer; and pulsed rapid thermal annealing using successive pulses separated by rest periods to transform the amorphous silicon layer to a polysilicon layer. In an alternate PRTA method, instead of forming the tri-layer structure, a bi-layer structure is formded over the glass layer. The bi-layer structure does not have the top dielectric layer of the tri-layer structure. The bi-layer structure includes dielectric and amorphous silicon layers.

REFERENCES:
patent: 4751193 (1988-06-01), Myrick
patent: 5147826 (1992-09-01), Liu et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5569610 (1996-10-01), Zhang et al.
G. Liu et al., Appl. Phys. Lett. 5567)(1989)660 "Selective area crystallization of a-Si by low temperature RTA" Aug. 1989.
R. Kakkad et al., J. Non-Cryst. Solids 115(1989)66 "Low temperature selective crystallization of a-Si" 1989.
Atsushi Kohno et al., "High Performance Poly-Si TFTs Fabricated Using Pulsed Laser Annealing and Remote Plasma CVD with Low Temp. Processing", IEEE Trans. on Electon Devices, V. 42, No. 2, Feb. 95, pp. 251-257.
Hiroshi Tanabe et al., "Excimer Laser Crystallization of Amorphous Silicon Films", NEC Res. & Dev., Vo. 35, No. 3, Jul. 1994, pp. 254-260.
Kikuyo Ono et al., "Effect of Channel Implantation on the Device Performance of Low Temperature Processed Polycryst. Silicon Thin Films Transistors", Japan. Jour. of Applied Physics, vol. 29, No. 12, Dec. 90, pp. 2705-2710.
Madeline Bonnel et al., "Poly-si Thin Film Trans, Fabricated with Rapid Thermal Annealed Silicon Films", Japan. Jour of Applied Physics, vol. 30, No. 11B, Nov. 91, pp. L 1924-L 1926.
Gang liu et al., "Polycrystalline Silicon Thin Film trans, on Corning 7059 Glass Substrates using Short Time, Low-Temperature Processing", App. Phys. Lett. 62(20), May 93, pp. 2554-2556.
Yue Kuo, "Thin Film Transistors Technologies", The Electrochemical Society Proceedings vol. 94-35, pp pp. 115-125.
Steve Jurichich et al., "Low Thermal Budget Polycrystalline Silicon-Germanium Thin-Film Trans. Fabricated by Rapid Thermal Annealing", Jpn. J. Appl. Phys., vol. 33 (1994), Aug. 94, pp. L 1139 L 1141.
Yue Kuo, "Thin-Film Trans. with Multistep Deposited Amorphous Silicon Layers", Appl. Phys. Lett. 67(15), Oct. 95, pp. 2173-2175.
Y. Kuo, et al., "Reactive Ion Etching of PECVD n+ a-Si:H Plasma Damage to PECVD Silicon Nitride Film and Application to Thin Film Transistor Preparation", J. Electrochem. Soc. vol. 139, Feb. 92, pp. 548-552.
H. Richter et al., "The One Phonon Raman Spectrum in Microcrystalline Silicon", Solid State Communications, vol. 39, pp. 625-629.
R. Pretorius et al., "Evaluation of Anomalies During Nickel and Titanium Silicide Formation Model", Materials Chemistry and Physics, 1993, pp. 31-38.
Dexin, et al., "Titanium Silicides Formed by Rapid Thermal Vacuum Processing", J. Appl. Phys. Mar. 1990, pp. 2171-2173.
Losch et al., "Microstructure of the Pd/a-Si:H Interface", Journal of Non-Crystalline Solids 77 & 78, 1985, pp. 1019-1022.

Affiliated with

Also associated with

Rating

Polysilicon grown by pulsed rapid thermal annealing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polysilicon grown by pulsed rapid thermal annealing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polysilicon grown by pulsed rapid thermal annealing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1858434