Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-10-09
1998-06-30
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438164, H01L 2184
Patent
active
057733279
ABSTRACT:
A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film containing at least one of nickel, iron, cobalt, platinum and palladium so that it adheres to parts of the impurity regions, and annealing it at a temperature lower than the crystallization temperature of pure amorphous silicon to advance the crystallization starting therefrom and to crystallize the impurity regions and channel forming region.
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Takemura Yasuhiko
Yamazaki Shunpei
Zhang Hongyong
Booth Richard A.
Ferguson Jr. Gerald J.
Niebling John
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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