Photo cathode made from composite semiconductor/glass material

Details Photo cathode made from composite semiconductor/glass material Photo cathode made from composite semiconductor/glass material

1980-03-13

1982-08-17

Rutledge, L. Dewayne

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

29572, 148 331, 357 4, 357 30, 357 89, 427 74, 428428, 428432, H01L 2936, H01L 3100

Patent

active

043448038

ABSTRACT:
A composite semiconductor/glass material comprising at least one semiconductor layer permanently connected to a plate shaped glass substrate, the doping of the semiconductor layer rising from a minimum at its surface away from the glass substrate to a maximum adjacent the glass substrate.

REFERENCES:
patent: 3287611 (1966-11-01), Bockemuehl et al.
patent: 3289024 (1966-11-01), De Haan et al.
patent: 3458782 (1969-07-01), Buck et al.
patent: 3460240 (1969-08-01), Tarneja et al.
patent: 3502884 (1970-03-01), Perlman et al.
patent: 3548233 (1970-12-01), Cave et al.
patent: 3575628 (1971-04-01), Word
patent: 3631303 (1971-12-01), Antypas et al.
patent: 3769536 (1973-10-01), Antypas et al.
patent: 4086102 (1978-04-01), King

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