Semiconductor device having cobalt niobate-metal silicide electr

Details Semiconductor device having cobalt niobate-metal silicide electr Semiconductor device having cobalt niobate-metal silicide electr

1999-05-07

2000-06-20

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257405, 257406, 257410, 257411, H01L 2976

Patent

active

060780894

ABSTRACT:
A semiconductor device having a cobalt niobate-cobalt silicide gate electrode structure is provided. A semiconductor device, consistent with one embodiment of the invention, is formed by forming a cobalt niobate gate insulating layer over the substrate and forming a cobalt silicide layer over the cobalt niobate layer. The cobalt silicide layer and cobalt niobate gate insulating layer may, for example, be selectively removed to form at least one cobalt silicide-cobalt niobate gate electrode structure. The cobalt niobate-cobalt silicide gate electrode structure can, for example, increase the operating speed of the device as compared to conventional transistors.

REFERENCES:
patent: 4925817 (1990-05-01), Ikeda et al.
patent: 5844122 (1998-12-01), Kato
Chang, D.D.; Ling, H.C. "The effects of dopants on the electrical resistivity in lead magnesiom niobate multilayer capacitors." IEEE Trans. on Components, Hybrids and Man'f. Tech., vol. 12, No. 2, p. 310-315 Abstract only.

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