Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-09-09
1998-05-19
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257315, H01L 29788
Patent
active
057539537
ABSTRACT:
A drain region and a source region are formed in a silicon substrate, and a select gate is formed on the substrate between the source and drain regions with a gate insulating film sandwiched. On one side of the select gate, a floating-gate is formed out of a sidewall formed with an insulating film sandwiched. On the floating-gate and the select gate, a control gate is formed with an insulating film sandwiched. The insulating film directly below the floating-gate is formed as a tunnel oxide film which can allow FN tunneling of electrons. In an erase operation, electrons are injected into the floating-gate from the silicon substrate, and in a write operation, electrons are extracted from the floating-gate to the drain region. A current required for writing and erasing each cell can be decreased, a low power supply can be used, and the lifetime of the tunnel insulating film can be elongated. Thus, the invention provides a semiconductor storage device (EEPROM) which works as a nonvolatile memory capable of page erase and page write at a low supply voltage.
REFERENCES:
patent: 5422504 (1995-06-01), Chang et al.
patent: 5429969 (1995-07-01), Chang
Patent Abstracts of Japan, vol. 17, No. 672 (E-1474), Dec. 10, 1993 of Japan Patent 5-226662, Matsushita Corp., Sept. 3, 1993.
Matsushita Electronics Corporation
Meier Stephen
LandOfFree
Semiconductor storage device and method of driving the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor storage device and method of driving the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor storage device and method of driving the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1855502