Semiconductor device for improving short channel effect

Details Semiconductor device for improving short channel effect Semiconductor device for improving short channel effect

1999-06-07

2000-06-20

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257345, 257404, 257408, H01L 2976, H01L 2994, H01L 31113

Patent

active

060780819

ABSTRACT:
Disclosed are a semiconductor device and a method for fabricating the same which improve short channel effect and increase current driving force. The semiconductor device includes a first conductivity type semiconductor substrate, a gate electrode formed on the semiconductor substrate, a sidewall insulating film formed at both sides of the gate electrode, a second conductivity type first lightly doped impurity region and a second conductivity type second heavily doped impurity region formed in the semiconductor substrate at both sides of the gate electrode, a first conductivity type first impurity region for surrounding the second conductivity type first impurity region, and a first conductivity type second impurity region for surrounding the second conductivity type second impurity region.

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