Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-07
2000-06-20
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257336, H01L 2976
Patent
active
060780797
ABSTRACT:
Disclosed herein are a structure of and a method of manufacturing a semiconductor device which can relatively readily form a high-concentration impurity layer or a three-layer LDD structure for reducing contact resistance in a source/drain region in high accuracy.
In the method of manufacturing a semiconductor device, deposition of an oxide insulating film and anisotropic etching thereof are carried out a plurality of times, and the anisotropic etching is carried out in a state covering one side wall of a gate electrode part with a mask at least once in the plurality of times thereby forming side wall spacers having different widths on both side walls of the gate electrode part respectively, while the side wall spacer provided on one of the side walls is employed as a mask to form a high-concentration n-type impurity layer to be inside the source/drain region on a semiconductor substrate surface corresponding to this side.
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Crane Sara
Mitsubishi Denki & Kabushiki Kaisha
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