Semiconductor devices having backside probing capability

Details Semiconductor devices having backside probing capability Semiconductor devices having backside probing capability

1998-01-22

2000-06-20

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

257621, H01L 2358, H01L 2940

Patent

active

060780576

ABSTRACT:
Integrated circuits are provided which permit backside probing while being operated. Conductive trenches are fabricated into the surface of semiconductor chip at preselected locations. Access to specific electrically connected nodes of the integrated circuit can be effected through the conductive trenches by backside thinning and milling of the semiconductor chip followed by e-beam probe or mechanical probe usage.

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