Method of producing an anodic bonded semiconductor sensor elemen

Details Method of producing an anodic bonded semiconductor sensor elemen Method of producing an anodic bonded semiconductor sensor elemen

1997-10-08

2000-06-20

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438 51, 438 52, 438691, 438125, H01L 2100

Patent

active

060777214

ABSTRACT:
A semiconductor sensor mount is formed as follows: through holes are formed that penetrate a glass plate; and then the glass plate having the through holes is dipped into hydrofluoric acid etchant to smooth the inner peripheral surfaces of the respective through holes. By etching the inner peripheral surfaces of the respective through holes after the through hole formation, minute roughness and cracks formed on the inner peripheral surfaces are removed, and thereby the areas for adsorbing gas are substantially reduced. That is, vacuums within the through holes can be maintained at a high degree during the anodic bonding, whereby undesirable electric discharge phenomena are prevented even if a relatively high voltage is applied during the anodic bonding. Accordingly, the yield of products can be improved while improving productivity.

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