Sputtering device and sputtering method

Details Sputtering device and sputtering method Sputtering device and sputtering method

1998-02-20

2000-06-20

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429806, 20429808, 20429816, C23C 1435, C23C 1434

Patent

active

060774037

ABSTRACT:
A sputtering device includes a chamber equipped with an exhaust system. A sputtering power source applies specific high frequency electric power to the target. A supplemental electrode is provided so that it surrounds the flight path of sputter particles between the target and a substrate. The supplemental electrode is either maintained at a floating potential so that it is capacitively coupled with the target to which high frequency electric power has been applied, in addition, high frequency electric power of the same frequency may be applied directly to the supplemental electrode. A plasma P' is formed on the inside of the supplemental electrode, and the sputter particles released from the target are ionized. An extraction-use electric field is set up by an electric field establishment means, and is directed perpendicularly to the substrate. This construction and its associated method allow a film to be formed with good bottom coverage on the inner surfaces of holes whose aspect ratio is over 4.

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