Semiconductor device with multi-layered heat-resistive electrode

Details Semiconductor device with multi-layered heat-resistive electrode Semiconductor device with multi-layered heat-resistive electrode

1994-03-17

1995-06-20

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257763, 257768, 257769, 257770, H01L 2348, H01L 2940, H01L 2946, H01L 2954

Patent

active

054263310

ABSTRACT:
A bipolar transistor fabricated on a silicon layer has a base electrode with a multi-layered structure implemented by a titanium film, a titanium nitride film, a platinum film and a gold film, and the platinum film is regulated to 5 to 30 nanometers thick for decreasing the thermal stress between the platinum film and the titanium nitride film equal to or greater than 50 nanometers, thereby preventing the bipolar transistor from damage due to heat applications in later stages.

REFERENCES:
patent: 3879746 (1975-04-01), Fournier
patent: 3926747 (1975-12-01), Newby et al.
patent: 4702967 (1987-10-01), Black et al.
patent: 5130764 (1992-07-01), Cetronio et al.
patent: 5260603 (1993-11-01), Kamura et al.

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