Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-08-04
1995-06-20
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257655, 257776, 257335, 257339, 257500, H01L 2910, H01L 2938
Patent
active
054263255
ABSTRACT:
Non-uniformly doped regions are formed adjacent to semiconductor junctions which underlie high voltage crossovers. The non-uniformly doped regions prevent junction breakdown caused by strong electric fields. The voltage drop between a crossover and an element of an integrated circuit is spread over the non-uniformly doped region, to lessen the voltage drop between the crossover and the junction and lessen the electric field at the junction. Dopant concentrations in the non-uniformly doped region may be selected to minimize use of silicon real estate. In some embodiments, a graded dopant concentration is lightest near the junction and increases toward a circuit element being protected.
REFERENCES:
patent: 4933730 (1990-06-01), Shirato
patent: 5132753 (1992-07-01), Chang et al.
IBM Technical Disclosure Bulletin, vol. 22, No. 11, Apr. 1980, pp. 5146-5147.
Chang Mike F.
Owyang King
Williams Richard K.
Hardy David B.
Limanek Robert P.
Millers David T.
Siliconix incorporated
Steuber David E.
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