Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1990-11-09
1993-11-23
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
15662072, C30B 1300
Patent
active
052640728
ABSTRACT:
A process allowing so-called indirect-heating SOI methodology to selectively transform predefined regions of a semiconductor film formed on an insulating substrate into grain-boundary-free regions. In an indirect-heating SOI, a semiconductor film which is recrystallized to be grain-boundary free is heated above its melting point by the heat generated in an energy-absorbing layer formed thereon. In the present invention, a layer having a relatively smaller thermal conductivity, such as SiO.sub.2 layer, is provided between the semiconductor film to be recrystallized and the energy-absorbing layer, both having larger thermal conductivities. The smaller-thermal-conductivity layer, functioning as a thermal-resistance, has selectively increased thickness at the portions thereof corresponding to the predefined regions transformed to be grain-boundary free in the semiconductor film. In each of the predefined regions, a desired temperature distribution profile, that is, the lowest at the center of the region and becoming higher toward the periphery of the region, is established, when the energy-absorbing layer is irradiated with a beam of radiant energy sufficient to melt the semiconductor film. Thus, the semiconductor film can be recrystallized to be grain-boundary-free single crystalline in each predefined region.
REFERENCES:
patent: 3655439 (1972-04-01), Seiter
patent: 4388145 (1983-06-01), Hawkins et al.
patent: 4448632 (1984-05-01), Akasaka
patent: 4543133 (1985-09-01), Mukai
patent: 4545823 (1985-10-01), Drowley
patent: 4589951 (1986-05-01), Kawamura
Mukai et al., "Single Crystalline Si Islands . . . ", Appl. Phys. Lett. 44(10) 15 May 1984.
Sakurai et al., "Laser-Induced Lateral Epitaxial Growth Over Silicon Dioxide with Locally Varied Encapsulation", Appl. Phys. Lett. 41(1) 1982, pp. 64-67.
Journal of Applied Physics, vol. 55, No. 6, Mar. 15, 1984, pp. 1607-1609, American Institute of Physics, NY; S. Kawamura et al.: "Laser Recrystallization of Si over SiO2 with a Heat-Sink Structure".
Extended Abstracts, vol. 82-1, May 1982, pp. 243-244, Abstract No. 150, Pennington, N.J.; S. Kawamura et al.: "Laser-Induced Lateral Epitaxial Growth of Si over SiO2".
IBM Technical Disclosure Bulletin, vol. 22, No. 12, May 1980, pp. 5473, 5474, New York; A. B. Fowler et al.: "Selective Laser Annealing Through Quarter- and Half-Wave Coatings".
European Search Report, The Hague, Oct. 19, 1988.
Breneman R. Bruce
Fujitsu Limited
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