Method and means for manufacturing mono-crystalline silicon in t

Details Method and means for manufacturing mono-crystalline silicon in t Method and means for manufacturing mono-crystalline silicon in t

1980-04-28

1982-01-05

Bernstein, Hiram

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617SP, 156617M, 156DIG62, 156DIG88, 422109, 422249, 156DIG102, 156DIG97, C30B 1506

Patent

active

043092390

ABSTRACT:
This invention relates to a process for manufacturing monocrystalline silicon.
According to this process, the fused zone Z is formed on a cylinder (1) of polycrystalline silicon and a film (5) is "drawn" by means of a seed-plate (3). The fused zone Z is obtained by resorting to heating means, notably one or several electron guns whose beam is situated in a plane P.sub.2.
By means of this process, monocrystalline silicon is manufactured in the form of tape.

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