Integrated circuit having a memory cell transistor with a gate o

Details Integrated circuit having a memory cell transistor with a gate o Integrated circuit having a memory cell transistor with a gate o

1998-07-20

2000-05-23

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257404, 257401, H01L 29772

Patent

active

060668814

ABSTRACT:
A gate insulating film in a memory cell portion is thicker than a gate insulating film in a peripheral circuitry. Source/drain of an MOS transistor in the memory cell portion have double-diffusion-layer structures, respectively, and source/drain of an MOS transistor in the peripheral circuitry have triple-diffusion-layer structures, respectively.

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